Junghwan KIM is an assistant professor in the graduate school of semiconductor materials and devices engineering and in the department of material science and engineering at the Ulsan National Institute of Science and Technology (UNIST).

Prof. Kim received his B.S. (2012) in electrical engineering and computer science at Ajou University, Korea and his M.S. (2014) and Ph.D. (2016) in innovative engineered materials at Tokyo Institute of Technology, Japan. His main research interests include exploring new functional materials and developing electronic devices. Before joining the Ulsan National Institute of Science & Technology (UNIST), he was an assistant professor at Tokyo Institute of Technology since 2016. He has been dedicated mainly to metal oxide and halide materials and related devices, such as thin-film transistors and light-emitting diodes, over the last decade. He believes a breakthrough can be made by breaking tradeoff relations, such as performance versus lifetime and performance versus stability. For that, he has used various advanced material characterization techniques combined with computational calculations and device simulation. Based on this background, he conducted many industrial collaborative studies with AGC, LG Display, Mitsubishi Chemical, Panasonic, Samsung Electronics, etc., and performed Japanese national projects as a principal investigator. He won the young scientists’ awards from the Inoue Foundation for Science (2017) and MEXT (2022). By joining UNIST, he plans to apply his background to future electronics, such as AI devices and next-generation memory applications.