Soo-Hyun Kim, Ph.D. is a professor in the graduate school of semiconductor materials and devices engineering and in the department of materials science and engineering at the Ulsan National Institute of Science and Technology (UNIST).

His main research interests include the developments of the process technology for nanoscale thin films and nano-materials using atomic layer deposition (ALD) and area-selective ALD (AS-ALD), and their applications into the advanced Cu metallization and emerging interconnects technology for semiconductor devices. Before joining to UNIST in 2022, he was a Professor in the school of materials science and engineering at Yeungnam University from 2007. He also served as a visiting professor in the department of chemistry and chemical biology at Harvard University, USA from 2012 to 2013 and technology consulting professor for SK Hynix Semiconductor from 2019 to 2020. Prior to joining Yeungnam University, he was employed at the R&D Division of Hynix Semiconductor (Currently, SK Hynix Semiconductor) from 2003 to 2007. During this time, he developed the metallization processes for the memory devices including ALD-WN, ALD-W, low-C_b bit line, Cu metallization for DRAM etc. Professor Kim is an author of more than 170 technical publications and filed or awarded more than 30 U.S or Korean patents related to Cu metallization and ALD technology etc. He is also one of the authors on the book titled by “Atomic Layer Deposition for Semiconductors, Chapter 8”. From 2014, he has been an Asian committee member of international interconnect technology conference (IITC) and served as a general co-chair of 2017 IITC conference held at Hsinchu, Taiwan and 2020 IITC conference at San Jose, USA (virtual). Prof. Kim received B.S. (1997), M.S degrees (1999) in metallurgical engineering, and Ph.D. degree (2003) in materials science and engineering at Seoul National University, Korea.